Journal of Vacuum Science & Technology

@jvstab.bsky.social

JVST A publishes research on interfaces & surfaces of materials, thin films, & plasmas. JVST B covers microelectronics & nanotechnology, with a focus on processing, measurement, & phenomena associated with micrometer & nanometer structures & devices.

By introducing bias-pulsed ALE, researchers overcome a key bottleneck of conventional ALE, showing that even one of the most chemically inert materials - diamond - can be etched with true atomic precision while simultaneously improving surface quality. doi.org/10.1116/6.00...

Rapid surface smoothing of monocrystalline diamond with bias-pulsed atomic layer etching

Atomic layer etching (ALE), an etch method capable of precisely removing atomic monolayers, is gaining renewed interest as an enabling technology across a wide

doi.org

Machine learning has become essential in materials & surface analysis, providing critical insights into composition, structure & function. @latrobe.edu.au researchers highlight practical computational choices to achieve faster results exploring #ToFSIMS hyperspectral data. doi.org/10.1116/6.00...

Considerations for implementing real-time machine learning tools to evaluate ToF-SIMS data

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) produces complex, information-rich, high-dimensional chemical data sets that can be challenging to ana

doi.org

Energy & exposure time of Ar ion bombardment on 2D WSe2 is investigated - researchers from Duke University discover using the Ar ion beam to modify metal contact interfaces in 2D FETs improves device performance variation at the cost of a reduction in on-current. doi.org/10.1116/6.00...

Influence of Ar ion beam on WSe2 and resulting contact interfaces in 2D field-effect transistors

Semiconducting two-dimensional materials, such as the transition metal dichalcogenides (TMDs), are atomically thin with desirable bandgaps that make them highly

doi.org

When 2D materials are grown by #MBE, they often have a high density of twin defects. Check out this study from @UWMadison & @usarmy_devcom on growth conditions of van der Waals material GaSe - showing that at low temps, non-twinned films can be formed. doi.org/10.1116/6.00...

Adsorption-controlled epitaxy and twin control of γ-GaSe on GaAs (111)B

The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temp

doi.org

What if you could turn up the brightness of a chip like a volume knob? A few clever fabrication tweaks transform a thin film into a light-boosting amplifier & a tiny racetrack for photons—bringing sci-fi-level photonics a step closer to reality. doi.org/10.1116/6.00...

Gallium oxide: A potentially photonic material

We fabricated Er3+/Yb3+ codoped Ga2O3 thin films via radio frequency magnetron sputtering and investigated the effect of annealing temperature and Ar/O2 gas rat

doi.org

GaN is a material of interest for a wide range of applications. @cornelluniversity.bsky.social authors create lateral devices w/o air exposure using patterned MBE & selective area sublimation, a technique that may enable creation of very complicated devices in the future. doi.org/10.1116/6.00...

GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth

We present a technique of patterned in situ molecular beam epitaxy (MBE) selective area sublimation etching of p-type GaN and direct MBE regrowth of n-type GaN

doi.org